Datasheet Details
| Part number | S6025L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 153.31 KB |
| Description | Thyristor |
| Datasheet | S6025L-INCHANGE.pdf |
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Overview: isc Thyristors S6025L.
| Part number | S6025L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 153.31 KB |
| Description | Thyristor |
| Datasheet | S6025L-INCHANGE.pdf |
|
|
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·With TO-220 packaging ·Electrically-isolated package ·High surge capability ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) ITSM PG(AV) RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=25℃ ) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature Tp=8.3ms 50HZ 60HZ MIN 600 600 25 300 350 0.5 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=100℃ Tj=125℃ VTM On-state voltage ITM= 25A IGT Gate-trigger current VD = 12 V;
RL=60Ω VGT Gate-trigger voltage VD = 12 V;
RL=60Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.01 1.0 mA 2.0 1.6 V 35 mA 1.5 V 2.5 ℃/W isc website:.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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S6025L | Thyristors | Littelfuse |
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S6025N | Thyristors | Littelfuse |
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S6025R | Thyristors | Littelfuse |
| Part Number | Description |
|---|---|
| S6025R | Thyristor |
| S6020L | Thyristor |
| S6008L | Thyristor |
| S6012D | Thyristor |
| S6012R | Thyristor |
| S6015L | Thyristor |
| S6065J | Thyristor |
| S60SC4M | Schottky Barrier Rectifier |