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S8008R Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors S8008R.

General Description

·With TO-220 Non-isolated packaging ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current PG(AV) Tj Tstg Average gate power dissipation Operating junction temperature Storage temperature 50Hz 60Hz MIN 800 800 8 83 100 0.5 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL IRRM IDRM VTM PARAMETER Repetitive peak reverse current Repetitive peak off-state current On-state voltage CONDITIONS VRM=VRRM VDM=VDRM Tj=25℃ Tj=100℃ Tj=125℃ ITM= 8A IGT Gate-trigger current VD = 12 V;

RL=33Ω VGT Gate-trigger voltage VD = 12 V;

RL=33Ω IH Holding current IGT= 0.2A MIN MAX UNIT 0.01 0.2 mA 0.5 1.6 V 1 15 mA 1.5 V 30 mA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.

S8008R Distributor