Datasheet Details
| Part number | S8015L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 144.28 KB |
| Description | Thyristor |
| Datasheet | S8015L-INCHANGE.pdf |
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Overview: isc Thyristors INCHANGE Semiconductor S8015L.
| Part number | S8015L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 144.28 KB |
| Description | Thyristor |
| Datasheet | S8015L-INCHANGE.pdf |
|
|
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·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave;60HZ;Tc=125℃ ) PG(AV) Average gate power dissipation Tj Operating junction temperature Tc=70℃ Tp=8.3ms;Tc=70℃ 800 V 15 A 188 A 0.6 W -40~125 ℃ Tstg Storage temperature -40~150 ℃ isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor S8015L ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 30A IGT Gate-trigger current VD = 12 V;
RL=60Ω VGT Gate-trigger voltage VD = 12 V;
RL=60Ω Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 0.02 2.0 mA 1.8 V 30 mA 1.5 V 2.5 ℃/W NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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