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S8015L - Thyristor

General Description

With TO-220 packaging High heat dissipation and durability Thermowatt construction for low thermal Glass passivated junctions and center gate fire for greater parameter uniformity and stability Minimum Lot-to-Lot variations for robust device performance and reliable operatio

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isc Thyristors INCHANGE Semiconductor S8015L DESCRIPTION ·With TO-220 packaging ·High heat dissipation and durability ·Thermowatt construction for low thermal ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave;60HZ;Tc=125℃ ) PG(AV) Average gate power dissipation Tj Operating junction temperature Tc=70℃ Tp=8.3ms;Tc=70℃ 800 V 15 A 188 A 0.