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isc Thyristors
S8020L
DESCRIPTION ·With TO-220 packaging ·Electrically-isolated package ·High surge capability ·Glass passivated junctions and center gate fire for greater
parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(RMS) ITSM PG(AV)
RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=25℃ )
Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
Tp=8.3ms
50HZ 60HZ
MIN
800 800 20 255 300 0.