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SCT3060 - N-Channel MOSFET

Key Features

  • Static drain-source on-resistance: RDS(on)≤78mΩ.
  • Fast switching speed.
  • Fast reverse recovery.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel SiC SMOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤78mΩ ·Fast switching speed ·Fast reverse recovery ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·DC/DC converters ·Switch mode power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage -4~22 ID Drain Current-Continuous 39 IDM Drain Current-Single Pulsed 97 PD Total Dissipation @TC=25℃ 165 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 0.75 UNIT ℃/W SCT3060 isc website：www.iscsemi.