Datasheet4U Logo Datasheet4U.com

SKI10195 - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current.
  • ID= 47A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 18.4mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SKI10195 N-channel Trench Power MOSFET Sanken
SKI10123 N-channel Trench Power MOSFET Sanken
SKI10297 N-channel Trench Power MOSFET Sanken
SKI-FF530 Infrared emitting diode which mounted high power 850 nm IR CHIP ETC
SKI03021 N-channel Trench Power MOSFET Sanken

Other Datasheets by Inchange Semiconductor

Part Number Description
SKI10123 N-Channel MOSFET
SKI10297 N-Channel MOSFET
SKI03021 N-Channel MOSFET
SKI03036 N-Channel MOSFET
SKI03063 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor SKI10195 FEATURES ·Drain Current –ID= 47A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18.4mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 47 A IDM Drain Current-Single Pluse 94 A PD Total Dissipation @TC=25℃ 116 W TJ Max.