SKS10N20 Datasheet | Inchange Semiconductor

FEATURES - With TO-220F package - Low input capacitance and gate charge - Low gate input resistance - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - APPLICATIONS - Switching applications - Load switch - Power management - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 10 7 Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.12 62.5 UNIT ℃/W ℃/W isc website：.iscsemi.cn...