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SPI08N80C3

Manufacturer: Inchange Semiconductor

SPI08N80C3 datasheet by Inchange Semiconductor.

SPI08N80C3 datasheet preview

SPI08N80C3 Datasheet Details

Part number SPI08N80C3
Datasheet SPI08N80C3-INCHANGE.pdf
File Size 283.17 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
SPI08N80C3 page 2

SPI08N80C3 Overview

·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 104 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL...

SPI08N80C3 Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -High peak current capability -Ultra low gate charge -Ultra low effective capacitances

SPI08N80C3 from other manufacturers

View SPI08N80C3 datasheet index

Brand Logo Part Number Description Other Manufacturers
Infineon Technologies Logo SPI08N80C3 Power Transistor Infineon Technologies
Inchange Semiconductor logo - Manufacturer

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