Datasheet Summary
isc N-Channel MOSFET Transistor
- Features
- Static drain-source on-resistance:
RDS(on) ≤0.65Ω
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRIPTION
- High peak current capability
- Ultra low gate charge
- Ultra low effective capacitances
-...
