• Part: SPP08N80C3
  • Manufacturer: Inchange Semiconductor
  • Size: 243.62 KB
Download SPP08N80C3 Datasheet PDF
SPP08N80C3 page 2
Page 2

SPP08N80C3 Description

·High peak current capability ·Ultra low gate charge ·Ultra low effective capacitances · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 104 Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.47mA RDS(on) Drain-Source On-Resistance VGS=10V;.

SPP08N80C3 Key Features

  • Static drain-source on-resistance
  • DESCRIPTION -High peak current capability -Ultra low gate charge -Ultra low effective capacitances