Datasheet4U Logo Datasheet4U.com

SPP15P10P - N-Channel MOSFET

General Description

design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source

Key Features

  • br>.
  • Static drain-source on-resistance: RDS(on)≤0.24Ω.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPP15P10P Small-Signal-Transistor Infineon Technologies
SPP15P10PH Small-Signal-Transistor Infineon
SPP15N60C3 Power Transistor Infineon Technologies
SPP15N60CFD Power Transistor Infineon
SPP15N65C3 Power Transistor Infineon Technologies

Other Datasheets by Inchange Semiconductor

Part Number Description
SPP15N60C3 N-Channel MOSFET
SPP15N60CFD N-Channel MOSFET
SPP11N60C3 N-Channel MOSFET
SPP11N60CFD N-Channel MOSFET
SPP11N60S5 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc P-Channel MOSFET Transistor SPP15P10P，ISPP15P10P ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.24Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -15 IDM Drain Current-Single Pulsed -60 PD Total Dissipation @TC=25℃ 128 Tj Max.