Datasheet Details
| Part number | SPP80P06P |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 238.38 KB |
| Description | P-Channel MOSFET |
| Download | SPP80P06P Download (PDF) |
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| Part number | SPP80P06P |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 238.38 KB |
| Description | P-Channel MOSFET |
| Download | SPP80P06P Download (PDF) |
|
|
|
·175℃ operating temperature ·Avalanche rated ·dv/dt rated ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -80 IDM Drain Current-Single Pulsed -320 PD Total Dissipation @TC=25℃ 340 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.4 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor SPP80P06P，ISPP80P06P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID= -250μA VGS(th) Gate Threshold Voltage VDS=VGS;
isc P-Channel MOSFET Transistor SPP80P06P，ISPP80P06P ·.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
SPP80P06P | Power-Transistor | Infineon Technologies |
|
SPP80P06PH | Power-Transistor | Infineon Technologies |
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|---|---|
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