SPP80P06P Overview
Key Specifications
Package: TO-220
Mount Type: Through Hole
Pins: 3
Max Operating Temp: 175 °C
Description
175℃ operating temperature - Avalanche rated - dv/dt rated - SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -80 IDM Drain Current-Single Pulsed -320 PD Total Dissipation @TC=25℃ 340 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ - SYMBOL PARAMETER Rth(j-c) Channel-to-case Rth(j-a) Channel-to-ambient MAX 0.4 62 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor SPP80P06P，ISPP80P06P TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID= -5.5mA RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -64A IGSS Gate-Source Leakage Current VGS= -20V; VDS= 0V IDSS Drain-Source Leakage Current VDS= -60V; VGS= 0V VSD Diode forward voltage IF= -15A; VGS = 0V MIN TYP MAX UNIT -60 V -2.1 -4.0 V 0.023 Ω -100 nA -1 μA -1.35 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
Key Features
- Static drain-source on-resistance: RDS(on)≤0.023Ω
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
