SPU04N60C3
FEATURES
- With To-251(IPAK) package
- New revolutionary high voltage technology
- Ultra low gate charge
- High peak current capability
- Improved transconductance
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
INCHANGE Semiconductor
- APPLICATIONS
- Switching applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=125℃
Drain Current-Single Pulsed
±30
4.5 2.8
Total Dissipation @TC=25℃
Tch
Max. Operating Junction Temperature
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 2.5...
