Inchange Semiconductor SPU07N60C3
N-Channel MOSFET
| Part No. | SPU07N60C3 |
|---|---|
| Datasheet | SPU07N60C3 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●With TO-251(IPAK) packaging●High speed switching
●Easy to use
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Power supply●DC-DC converters
●Motor control
●Switching applications
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 21.9 PD Total Dissipation 83 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.5 75 UNIT ℃/W ℃/W SPU07N60C3 isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor SPU07N60C3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 600...