Datasheet Details
| Part number | SPW20N60CFD |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.10 KB |
| Description | N-Channel MOSFET |
| Download | SPW20N60CFD Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor SPW20N60CFD, ISPW20N60CFD ·.
| Part number | SPW20N60CFD |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 241.10 KB |
| Description | N-Channel MOSFET |
| Download | SPW20N60CFD Download (PDF) |
|
|
|
·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.7 IDM Drain Current-Single Pulsed 52 PD Total Dissipation @TC=25℃ 208 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.6 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor SPW20N60CFD, ISPW20N60CFD ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V;
ID=0.25mA 600 V VGS(th) Gate Threshold Voltage VDS=VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
SPW20N60CFD | Cool MOS Power Transistor | Infineon Technologies |
|
SPW20N60C2 | Cool MOS Power Transistor | Infineon Technologies |
|
SPW20N60C3 | Cool MOS Power Transistor | Infineon Technologies |
|
SPW20N60S5 | Cool MOS Power Transistor | Infineon Technologies |
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