SQ2318AES - N-Channel MOSFET

Inchange Semiconductor

Key Features

Low drain-source on-resistance: RDS(on) ≤45mΩ.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

SQ2318AES n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	SQ2318AES
Manufacturer	Inchange Semiconductor
File Size	274.38 KB
Description	N-Channel MOSFET
Datasheet	SQ2318AES Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SQ2318AES	Automotive N-Channel MOSFET	Vishay
SQ2310ES	Automotive N-Channel MOSFET	Vishay
SQ2315ES	Automotive P-Channel MOSFET	Vishay
SQ2319ADS	Automotive P-Channel MOSFET	Vishay
SQ2301CES	Automotive P-Channel MOSFET	Vishay

Other Datasheets by Inchange Semiconductor

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤45mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Provides the designer with an extremely efficient and reliable device for use in battery and load management. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous@TA=25℃ IDM Drain Current-Single Pulsed PD Total Dissipation @TA=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-a) Channel-to-ambient thermal resistance SQ2318AES VALUE 40 ±20 5 20 1.