SQ2318AES Datasheet | Inchange Semiconductor

FEATURES - Low drain-source on-resistance: RDS(on) ≤45mΩ - Fast Switching Speed - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - Provides the designer with an extremely efficient and reliable device for use in battery and load management. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@TA=25℃ Drain Current-Single Pulsed Total Dissipation @TA=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature - THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-a) Channel-to-ambient thermal resistance VALUE 40 ±20 5 20 1.2 -55~150 -55~150 UNIT V V A A W ℃ ℃ MAX 104 UNIT ℃/W isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...