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Schottky Barrier Rectifier
INCHANGE Semiconductor
SRAF560
FEATURES ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low power loss,high efficiency ·Guard ring for overvoltage protection ·High surge capability,high current capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For use in low voltage,high frequency inverters ·Free wheeling and polarity protection applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
60
V
IF(AV)
Average Rectified Forward Current
5
A
Nonrepetitive Peak Surge Current
IFSM
8.