Datasheet4U Logo Datasheet4U.com

SSP80N06A - N-Channel MOSFET

General Description

Drain Current ID= 80A@ TC=25℃ Drain Source Voltage- : VDSS= 60V(Min) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High efficiency DC/DC Converters Synchronous Rectif

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSP80 (SSP80 / SSP100) Surround Sound Processor Manual HALCRO
SSP80-12 (SSP80-12 / SSP85-12) High Quality PV Module Skysol
SSP85-12 (SSP80-12 / SSP85-12) High Quality PV Module Skysol
SSP-T Surface Mount Quartz Crystal ETC
SSP-T5 Surface Mount Quartz Crystal ETC

Other Datasheets by Inchange Semiconductor

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor SSP80N06A ·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High efficiency DC/DC Converters ·Synchronous Rectification ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 80 A ID(puls) Pulse Drain Current 320 A Ptot Total Dissipation@TC=25℃ 140 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.