Inchange Semiconductor ST1510FX
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | ST1510FX |
|---|---|
| Datasheet | ST1510FX Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 750V(Min.)●High Speed Switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Electronic ballast for fluorescent lighting.●Switch mode power supplies.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Base Voltage VBE= 0 1500 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 6 A 62 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃/W ST1510FX isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ST1510FXELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Susta...