STB14NM50N-2 Datasheet (Inchange Semiconductor)

Part STB14NM50N-2
Description N-Channel MOSFET
Category MOSFET
Manufacturer Inchange Semiconductor
Size 265.22 KB
Inchange Semiconductor

STB14NM50N-2 Overview

Description

Low Drain-Source On-Resistance.

Key Features

  • Drain Current –ID= 12A@ TC=25℃
  • Drain Source Voltage- : VDSS= 500V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 320mΩ(Max)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation