STB26NM60N Description
·Low Drain-Source On-Resistance APPLICATIONS ·Switching application RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STB26NM60N TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS...
STB26NM60N Key Features
- Drain Current -ID=20A@ TC=25℃ -Drain Source Voltage