Inchange Semiconductor STD1802
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | STD1802 |
|---|---|
| Datasheet | STD1802 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V(Max)( IC= 3A; IB= 0.15A)●DC Current Gain -hFE = 100(Min)@ IC= 3A
●Fast -Switching speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●CCFL dirvers●Voltage regulators
●Relay dirvers
●High efficiency low voltage switching applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 6 A 1 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 8.33 ℃/W STD1802 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDI...
