Datasheet4U Logo Datasheet4U.com

STD6N95K5 - N-Channel MOSFET

Datasheet Summary

Features

  • With To-252(DPAK) package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – STD6N95K5

Datasheet Details

Part number STD6N95K5
Manufacturer INCHANGE
File Size 258.03 KB
Description N-Channel MOSFET
Datasheet download datasheet STD6N95K5 Datasheet
Additional preview pages of the STD6N95K5 datasheet.

📁 Similar Datasheet

  • STD6N95K5 - Power MOSFETs (STMicroelectronics)
  • STD6N90K5 - N-channel Power MOSFET (STMicroelectronics)
  • STD6N10 - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR (ST Microelectronics)
  • STD6N52K3 - N-CHANNEL POWER MOSFET (STMicroelectronics)
  • STD6N60M2 - N-channel Power MOSFET (STMicroelectronics)
  • STD6N62K3 - N-channel Power MOSFET (STMicroelectronics)
  • STD6N65M2 - N-channel Power MOSFET (STMicroelectronics)
  • STD6N80K5 - N-channel Power MOSFET (STMicroelectronics)
  • STD6NC40 - N-CHANNEL POWER MOSFET (ST Microelectronics)
  • STD6NF10 - N-CHANNEL POWER MOSFET (ST Microelectronics)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 950 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 9 6 36 PD Total Dissipation @TC=25℃ 90 Tj Max.
Published: |