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STF34NM60ND - N-Channel MOSFET

Datasheet Summary

Features

  • With low gate drive requirements.
  • Easy to drive.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STF34NM60ND

Datasheet Details

Part number STF34NM60ND
Manufacturer INCHANGE
File Size 197.37 KB
Description N-Channel MOSFET
Datasheet download datasheet STF34NM60ND Datasheet
Additional preview pages of the STF34NM60ND datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor STF34NM60ND ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±25 29 18 116 PD Total Dissipation 40 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.1 UNIT ℃/W isc website：www.iscsemi.
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