Full PDF Text Transcription for STF35N65M5 (Reference)
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STF35N65M5. For precise diagrams, and layout, please refer to the original PDF.
put resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ 27 TC=100℃ 17 A IDM Drain Current-Single Pulsed 108 A PD Total Dissipation 40 W Tj Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 3.
STF35N65M5 Datasheet
