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STF80N10F7 - N-Channel MOSFET

Features

  • Extremely low gate charge.
  • Ultra low on-resistance.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STF80N10F7

Datasheet Details

Part number STF80N10F7
Manufacturer INCHANGE
File Size 233.78 KB
Description N-Channel MOSFET
Datasheet download datasheet STF80N10F7 Datasheet
Additional preview pages of the STF80N10F7 datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STF80N10F7 ·FEATURES ·Extremely low gate charge ·Ultra low on-resistance ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 40 30 A IDM Drain Current-Single Pulsed 160 A PD Total Dissipation 130 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 5 UNIT ℃/W isc website：www.iscsemi.
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