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STI26NM60N - N-Channel MOSFET

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INCHANGE

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STI26NM60N N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – STI26NM60N

Datasheet Details

Part number	STI26NM60N
Manufacturer	INCHANGE
File Size	309.67 KB
Description	N-Channel MOSFET
Datasheet	STI26NM60N Datasheet
Additional preview pages of the STI26NM60N datasheet.

Product details

Description

Low Drain-Source On-Resistance APPLICATIONS

Max.

Features

Drain Current.
ID=20A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 8, 2020 |