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STP19NM50N - N-Channel MOSFET

Datasheet Summary

Features

  • Drain Current ID= 14A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 500V(Min).
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STP19NM50N

Datasheet Details

Part number STP19NM50N
Manufacturer INCHANGE
File Size 254.18 KB
Description N-Channel MOSFET
Datasheet download datasheet STP19NM50N Datasheet
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Full PDF Text Transcription

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 14 A IDM Pulse Drain Current 56 A Ptot Total Dissipation@TC=25℃ 110 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.14 ℃/W STP19NM50N isc website：www.iscsemi.
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