STP20N65M5 - N-Channel MOSFET

Inchange Semiconductor

Key Features

Typical RDS(on)=0.16Ω.
Excellent switching performance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

STP20N65M5 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	STP20N65M5
Manufacturer	Inchange Semiconductor
File Size	201.59 KB
Description	N-Channel MOSFET
Datasheet	STP20N65M5 Datasheet

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Isc N-Channel MOSFET Transistor ·FEATURES ·Typical RDS(on)=0.16Ω ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor STP20N65M5 ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 18 11.3 72 PD Total Dissipation 130 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.96 62.