Inchange Semiconductor STP20NM60FP
N-Channel MOSFET
| Part No. | STP20NM60FP |
|---|---|
| Datasheet | STP20NM60FP Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●With TO-220F packaging●High speed switching
●Low gate input resistance
●Standard level gate drive
●Easy to use
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●Power supply●Switching applications
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 80 PD Total Dissipation 45 Tj Operating Junction Temperature 150 Tstg Storage Temperature -65~150 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.8 62.5 UNIT ℃/W ℃/W STP20NM60FP isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Thresho...