Datasheet4U Logo Datasheet4U.com

STP23NM50N - N-Channel MOSFET

Datasheet Summary

Description

Low Drain-Source On-Resistance APPLICATIONS

Max.

Features

  • Drain Current.
  • ID= 17A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – STP23NM50N

Datasheet Details

Part number STP23NM50N
Manufacturer INCHANGE
File Size 271.40 KB
Description N-Channel MOSFET
Datasheet download datasheet STP23NM50N Datasheet
Additional preview pages of the STP23NM50N datasheet.

📁 Similar Datasheet

  • STP23NM50N - N-channel Power MOSFET (STMicroelectronics)
  • STP23NM60N - N-channel Power MOSFET (STMicroelectronics)
  • STP23NM60ND - N-channel Power MOSFET (STMicroelectronics)
  • STP23N80K5 - N-channel Power MOSFET (STMicroelectronics)
  • STP2301 - P-Channel Enhancement Mode MOSFET (Semtron)
  • STP2301 - P-Channel Enhancement Mode MOSFET (STANSON)
  • STP2301 - P-Channel MOSFET (VBsemi)
  • STP2301S - Single P-Channel MOSFET (Semtron)
  • STP2305 - P-Channel Enhancement Mode MOSFET (Semtron)
  • STP2305A - -20V P-Channel Enhancement Mode MOSFET (Semtron)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Published: |