Inchange Semiconductor STP30NF10
N-Channel MOSFET
| Part No. | STP30NF10 |
|---|---|
| Datasheet | STP30NF10 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Typical RDS(on)=0.038Ω●Application oriented characterization
●Easy to drive
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
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APPLICATIONS
●High-efficiency DC-DC coverters●Motor control
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ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous@TC=25℃ 35 IDM Drain Current-Single Pulsed 140 PD Total Dissipation 115 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.3 62.5 UNIT ℃/W ℃/W STP30NF10 isc website： 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor STP30NF10
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 100 V V...