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STP30NF10 - N-Channel MOSFET

Key Features

  • Typical RDS(on)=0.038Ω.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Isc N-Channel MOSFET Transistor ·FEATURES ·Typical RDS(on)=0.038Ω ·Application oriented characterization ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High-efficiency DC-DC coverters ·Motor control ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous@TC=25℃ 35 IDM Drain Current-Single Pulsed 140 PD Total Dissipation 115 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.3 62.