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STP60NF10 - N-Channel MOSFET

Key Features

  • Drain Current ID= 80A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 100V(Min).
  • Fast Switching Speed.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor STP60NF10 ·FEATURES ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching mode power supplies ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 80 A ID(puls) Pulse Drain Current 300 A Ptot Total Dissipation@TC=25℃ 300 W Tstg Storage Temperature Range -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.