Datasheet4U Logo Datasheet4U.com

STP80NF55-06 - N-Channel MOSFET

Key Features

  • Typical RDS(on)=0.005Ω.
  • Excellent switching performance.
  • Easy to drive.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STP80NF55-06 N-CHANNEL POWER MOSFET ST Microelectronics
STP80NF55-06FP N-CHANNEL POWER MOSFET ST Microelectronics
STP80NF55-08 N-CHANNEL POWER MOSFET ST Microelectronics
STP80NF55-08AG N-CHANNEL POWER MOSFET STMicroelectronics
STP80NF55L-06 N-CHANNEL POWER MOSFET ST Microelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description
STP80N10F7 N-Channel MOSFET
STP8N65M5 N-Channel MOSFET
STP8NK80ZFP N-Channel MOSFET
STP8NM50N N-Channel MOSFET
STP8NM60 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP80NF55-06 ·FEATURES ·Typical RDS(on)=0.005Ω ·Excellent switching performance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Solenoid and relay drivers ·DC-DC converters ·Automotive environment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 80 57 320 PD Total Dissipation 210 Tj Max.