Datasheet Details
| Part number | STP8NK80ZFP |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.77 KB |
| Description | N-Channel MOSFET |
| Datasheet | STP8NK80ZFP-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP8NK80ZFP.
| Part number | STP8NK80ZFP |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.77 KB |
| Description | N-Channel MOSFET |
| Datasheet | STP8NK80ZFP-INCHANGE.pdf |
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·Drain Current ID=6.2A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·100% avalanche tested ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V Drain Current-continuous@ TC=25℃ 6.2 ID A Drain Current-continuous@ TC=100℃ 3.9 ICM Collector Current-Peak 24.8 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 4.2 62.5 UNIT ℃/W ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor STP8NK80ZFP ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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STP8NK80ZFP | N-CHANNEL POWER MOSFET | STMicroelectronics |
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STP8NK80Z | N-CHANNEL POWER MOSFET | ST Microelectronics |
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