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Schottky Rectifier
INCHANGE Semiconductor
STPS15H100CB
FEATURES ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low Power Loss,high Efficiency ·Guard ring for overvoltage protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For use in low voltage,high frequency inverters,free wheeling
and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRWM
VR
IF(RMS)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Forward current
VALUE UNIT
100
V
10
A
IF(AV)
Average Rectified Forward per diode Current Tc=135℃;δ=0.5 Total package
7.
STPS15H100CB Datasheet
