Inchange Semiconductor STU16N65M5
N-Channel MOSFET
| Part No. | STU16N65M5 |
|---|---|
| Datasheet | STU16N65M5 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 12A@ TC=25℃●Drain Source Voltage- : VDSS= 650V(Min)
●Fast Switching Speed
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●
APPLICATIONS
●Switching applications●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 12 A IDM Pulse Drain Current 48 A Ptot Total Dissipation@TC=25℃ 90 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.38 ℃/W STU16N65M5 isc website： 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor STU16N65M5
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 650 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 3 5 V...