Datasheet Details
| Part number | STW15NM60ND |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 349.28 KB |
| Description | N-Channel MOSFET |
| Datasheet | STW15NM60ND-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | STW15NM60ND |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 349.28 KB |
| Description | N-Channel MOSFET |
| Datasheet | STW15NM60ND-INCHANGE.pdf |
|
|
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·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 14 A IDM Drain Current-Single Pluse 56 A PD Total Dissipation @TC=25℃ 125 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1 UNIT ℃/W STW15NM60ND isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STW15NM60ND ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
STW15NM60ND | N-channel Power MOSFET | STMicroelectronics |
|
STW15NM60N | N-channel Power MOSFET | STMicroelectronics |
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