STW26NM60ND Datasheet (PDF) Download
Inchange Semiconductor
STW26NM60ND

Description

Low Drain-Source On-Resistance.

Key Features

  • Drain Current -ID=21A@ TC=25℃
  • Drain Source Voltage- : VDSS= 600V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 175mΩ(Max)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation