STW30N65M5 Overview
isc N-Channel MOSFET Transistor STW30N65M5 FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.139Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Designed for use in switch mode power supplies and general purpose...
STW30N65M5 Key Features
- Static Drain-Source On-Resistance
