Datasheet Details
| Part number | STW32N65M5 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 387.86 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 STW32N65M5 Datasheet
|
|
|
General Description
Low Drain-Source On-Resistance
APPLICATIONS
Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±25
V
ID
Drain Current-Continuous
24
A
IDM
Drain Current-Single Pluse
96
A
Key Features
- Drain Current.
- ID=24A@ TC=25℃.
- Drain Source Voltage- : VDSS= 650V(Min).
- Static Drain-Source On-Resistance : RDS(on) = 119mΩ(Max).
- 100% avalanche tested.
- Minimum Lot-to-Lot variations for robust device performance and reliable operation.