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Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STWA45N65M5
·FEATURES ·Excellent switching performance ·Higher VDSS rating ·100 % Rg and UIS Tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS
Gate-Source Voltage
±25
ID
Drain Current-Continuous@TC=100℃
22
IDM
Drain Current-Single Pulsed
140
PD
Total Dissipation
210
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.