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SUD25N15-52-E3 - N-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 175 °C Junction Temperature.
  • 100 % Rg and UIS Tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SUD25N15-52-E3 ·FEATURES ·TrenchFET® Power MOSFET ·175 °C Junction Temperature ·100 % Rg and UIS Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·D Primary Side Switch ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS ID IDM PD Tch Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=175℃） TC=125℃ Drain Current-Single Pulsed Total Dissipation @TC=25℃ TA=25℃ Max. Operating Junction Temperature ±20 25 14.