SUK3015 - N-Channel MOSFET

Inchange Semiconductor

General Description

purpose applications.

Key Features

Drain Current.
ID= 15A@ TC=25℃.
Drain Source Voltage- : VDSS= 300V(Min).
Static Drain-Source On-Resistance : RDS(on) = 150mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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SUK3015 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	SUK3015
Manufacturer	Inchange Semiconductor
File Size	250.81 KB
Description	N-Channel MOSFET
Datasheet	SUK3015 Datasheet

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isc N-Channel MOSFET Transistor SUK3015 FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 150mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pluse 60 A PD Total Dissipation @TC=25℃ 89 W TJ Max.