SUP90N10-8M8P - N-Channel MOSFET

Features

TrenchFET® Power MOSFET.
175 °C Junction Temperature.
100 % Rg and UIS Tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	SUP90N10-8M8P
Manufacturer	INCHANGE
File Size	207.71 KB
Description	N-Channel MOSFET
Datasheet	SUP90N10-8M8P Datasheet
Additional preview pages of the SUP90N10-8M8P datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SUP90N10-8M8P ·FEATURES ·TrenchFET® Power MOSFET ·175 °C Junction Temperature ·100 % Rg and UIS Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Power Supply - Secondary Synchronous Rectification ·Industrial ·Primary Switch ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=175℃） TC=70℃ Drain Current-Single Pulsed ±20 90 90 240 PD Total Dissipation @TC=25℃ 300 Tch Max.

Published: Sep 3, 2020 |