Inchange Semiconductor SUP90N10-8M8P
N-Channel MOSFET
| Part No. | SUP90N10-8M8P |
|---|---|
| Datasheet | SUP90N10-8M8P Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●TrenchFET® Power MOSFET●175 °C Junction Temperature
●100 % Rg and UIS Tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●DESCRITION
●Power Supply - Secondary Synchronous Rectification
●Industrial
●Primary Switch
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ （ TJ=175℃） TC=70℃ Drain Current-Single Pulsed ±20 90 90 240 PD Total Dissipation @TC=25℃ 300 Tch Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.5 40 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SUP90N10-8M8P
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS...