Datasheet Details
| Part number | T1235-800G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.54 KB |
| Description | Thyristor |
| Datasheet | T1235-800G-INCHANGE.pdf |
|
|
Overview: isc Thyristors T1235-800G.
| Part number | T1235-800G |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.54 KB |
| Description | Thyristor |
| Datasheet | T1235-800G-INCHANGE.pdf |
|
|
|
·With TO-263( D2PAK ) packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RSM) ITSM PG(AV) Repetitive peak reverse voltage Average on-state current Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 800 V 800 V 12 A 120 126 A 1 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;
Tj=25℃ VD=VDRM Rated;
Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-mb) Gate-trigger voltage Junction to mounting base IT=17A Ⅰ VD =12V;RL=30Ω Ⅱ Ⅲ VD =12V;RL=30Ω Half cycle MIN MAX UNIT 0.005 1.0 mA 1.55 V 35 35 mA 35 1.3 V 1.4 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors T1235-800G NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
T1235-800G | logic level and standard Triacs | STMicroelectronics |
| Part Number | Description |
|---|---|
| T1235H-6I | Triac |
| T1210T-6I | Triac |
| T1210T-8T | Thyristor |