With TO-263( D2PAK ) packaging
Operating in 3 quadrants
High commutation capability
Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
Switching applications
Phase control
Static switching on inductive or resistive load
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isc Thyristors
T1235-800G
DESCRIPTION ·With TO-263( D2PAK ) packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM IT(RSM) ITSM PG(AV)
Repetitive peak reverse voltage
Average on-state current Surge non-repetitive on-state current
50HZ 60HZ
Average gate power dissipation ( over any 20 ms period )
Tj
Operating junction temperature
Tstg Storage temperature
MAX
UNIT
800
V
800
V
12
A
120 126
A
1
W
-40~125 ℃
-40~150 ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
S
T1235-800G Datasheet
