T2141F - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) High DC Current Gain : hFE= 600(Min.)@ IC= 3A Low Collector Saturation Voltage : VCE(sat)= 1.8V(Max.)@ IC= 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching

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T2141F npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	T2141F
Manufacturer	Inchange Semiconductor
File Size	213.33 KB
Description	NPN Transistor
Datasheet	T2141F Datasheet

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 600(Min.)@ IC= 3A ·Low Collector Saturation Voltage : VCE(sat)= 1.8V(Max.)@ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching for dynamotor excitation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ T2141F isc website： www.iscsemi.