Datasheet Details
| Part number | T410-600B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.42 KB |
| Description | Thyristor |
| Datasheet | T410-600B-INCHANGE.pdf |
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Overview: isc Thyristors T410-600B.
| Part number | T410-600B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 195.42 KB |
| Description | Thyristor |
| Datasheet | T410-600B-INCHANGE.pdf |
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·With TO-252( DPAK ) packaging ·Operating in 3 quadrants ·High mutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Motor control circuits ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) ITSM PG(AV) Average on-state current @Tc=110℃ Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 600 V 600 V 4 A 30 31 A 0.5 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;
Tj=25℃ VD=VDRM Rated;
Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-mb) Gate-trigger voltage Junction to mounting base IT=5.5A Ⅰ VD =12V;RL=30Ω Ⅱ Ⅲ VD =12V;RL=30Ω Half cycle MIN MAX UNIT 0.005 1 mA 1.6 V 10 10 mA 10 1.3 V 2.6 ℃/W isc website：.iscsemi.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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T410-600B | Three quadrant triac | HAOPIN |
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T410-600B | 4A Triacs | STMicroelectronics |
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T410-600B-TR | 4A Triacs | STMicroelectronics |
|
T410-600H | 4A Triacs | STMicroelectronics |
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T410-600T | 4A Triacs | STMicroelectronics |
| Part Number | Description |
|---|---|
| T410-800W | Triac |