Datasheet Details
| Part number | T435-600T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 165.55 KB |
| Description | Thyristor |
| Datasheet |
 T435-600T Datasheet
|
|
|
| Part number | T435-600T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 165.55 KB |
| Description | Thyristor |
| Datasheet |
T435-600T Datasheet
|
|
|
|
·With TO-220 packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current ITSM Surge non-repetitive on-state current @50Hz, 20ms PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature MAX 600 600 4 30 1 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VR=VRRM;
VD=VDRM IDRM Repetitive peak off-state current Tj=25℃ Tj=125℃ 0.005 1 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT= 5.5A;
tp=380us Ⅰ VD =12V;RG=30Ω Ⅱ Ⅲ VD =12V;RG=30Ω 1.6 V 35 35 mA 35 1.3 V 2.6 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors T435-600T NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
isc Thyristors T435-600T.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
T435-600T | 4A Triacs | STMicroelectronics |
|
T435-600B | 4A Triacs | STMicroelectronics |
|
T435-600B-TR | 4A Triacs | STMicroelectronics |
|
T435-600H | 4A Triacs | STMicroelectronics |
| JIEJIE MICROELECTRONICS | T435-600x | 4A TRIACs | JIEJIE MICROELECTRONICS |
| Part Number | Description |
|---|