Download T835-600G Datasheet PDF
Inchange Semiconductor
T835-600G
T835-600G is Thyristor manufactured by Inchange Semiconductor.
isc Thyristors APPLICATIONS - With TO-263 package. - Be suitable for general purpose AC switching,they can be used as an ON/OFF function in applications. - Minimum Lot-to-Lot variations for robust device performance and reliable operation. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) ITSM PG(AV) RMS on-state current @Tc=110℃ Surge non-repetitive on-state current F=50HZ;t=20ms F=60HZ;16.7ms Average gate power dissipation @Tj=125℃ t P=20μs Tj Operating junction temperature Tstg Storage temperature 600 600 8 80 84 1 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ Tj=25℃ Tj=125℃ VTM IGT VGT Rth(j-c) On-state voltage Gate-trigger current(minimum IGT is guaranted at 5% of IGT max)Quadrant(I - II - III) Gate-trigger voltage Quadrant (I - II - III) Thermal resistance ITM= 11A;tp=380μs VD = 12 V;RL=30Ω VD = 12 V;RL=30Ω Junction to...