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TIC106D Datasheet PDF

Inchange Semiconductor TIC106D

Thyristors

Part No. TIC106D
Datasheet TIC106D Download
Manufacturer
Inchange Semiconductor
Description Thyristors
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TIC106D datasheet page 1 preview

APPLICATIONS

●5A contimunous on-state current
●30A surge-current
●Max IGT of 200μA

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitive peak reverse voltage 400 V IT(AV) On-state current Tc=80℃ 3.2 A IT(RMS) RMS on-state current Tc=80℃ 5 A ITM Surge peak on-state current 30 A PGM Peak gate power PW≤300μs 1.3 W PG(AV) Average gate power 0.3 W Tj Operating Junction temperature 110 ℃ Tstg Storage temperature -40 ~+125 ℃ Rth(j-c) Thermal resistance, junction to case 1.9 ℃/W Rth(j-a) Thermal resistance, junction to ambient 62.5 ℃/W

ELECTRICAL CHARACTERISTICS

(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current VRM=VRRM, VRM=VRRM, Tj=110℃ VDM=VDRM, VDM=VDRM, Tj=110℃ 0.4 1.0 mA 0.4 1.0 mA VTM On-state voltage ITM= 5A 1.7 V IGT Gate-trigger current VAA=6V; RL=100Ω 200 μA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.0 V IH Hold...